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| Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 6.90.1 0.15 Unit: mm 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.45-0.05 2.50.1 0.7 4.0 s Features q 0.65 max. 1.0 1.0 0.2 High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings -200 -200 -5 - 0.1 -70 1 150 -55 ~ +150 1cm2 Unit V V V A mA W C C Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 0.45-0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 2.50.5 1 2 2.50.5 3 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 1.20.1 0.65 max. 0.45+0.1 - 0.05 (HW type) s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol VCEO VEBO hFE fT Cob *1 Conditions IC = -100A, IB = 0 IE = -1A, IC = 0 VCE = -10V, IC = -5mA IC = -50mA, IB = -5mA VCB = -5V, IE = 10mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz min -200 -5 30 typ max 14.50.5 Unit V V 150 -2.5 30 7 - V MHz pF VCE(sat) *1h FE Rank classification P 30 ~ 100 Q 60 ~ 150 Rank hFE 1 Transistor PC -- Ta 2.0 -120 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C -100 -100 - 0.9mA - 0.8mA - 0.7mA - 0.6mA -60 - 0.5mA - 0.4mA -40 - 0.3mA - 0.2mA - 0.1mA 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 2SA1961 IC -- VCE -120 VCE=-10V 25C Ta=75C -80 -25C IC -- VBE Collector power dissipation PC (W) Collector current IC (mA) -80 1.2 Collector current IC (mA) 1.6 IB=-1.0mA -60 0.8 -40 0.4 -20 -20 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 Ta=75C 25C -25C IC/IB=10 240 hFE -- IC 24 Cob -- VCB Collector output capacitance Cob (pF) VCE=-10V f=1MHz IE=0 Ta=25C Forward current transfer ratio hFE 210 180 150 Ta=75C 120 25C 90 60 30 0 -1 -25C 20 16 - 0.3 - 0.1 - 0.03 - 0.01 12 8 4 - 0.003 - 0.001 -1 -3 -10 -30 -100 -300 -1000 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Collector to base voltage VCB (V) 2 This datasheet has been download from: www..com Datasheets for electronics components. |
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